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M36L0R7040T0 M36L0R7040B0
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
FEATURES SUMMARY
MULTI-CHIP PACKAGE - 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory - 1 die of 16 Mbit (1Mb x16) Pseudo SRAM SUPPLY VOLTAGE - VDDF = VDDP = VDDQ = 1.7 to 1.95V - VPP = 9V for fast program (12V tolerant) ELECTRONIC SIGNATURE - Manufacturer Code: 20h - Device Code (Top Flash Configuration) M36L0R7040T0: 88C4h - Device Code (Bottom Flash Configuration) M36L0R7040B0: 88C5h PACKAGE - Compliant with Lead-Free Soldering Processes - Lead-Free Versions FLASH MEMORY SYNCHRONOUS / ASYNCHRONOUS READ - Synchronous Burst Read mode: 54MHz - Asynchronous Page Read mode - Random Access: 85ns SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME - 10s typical Word program time using Buffer Program MEMORY ORGANIZATION - Multiple Bank Memory Array: 8 Mbit Banks - Parameter Blocks (Top or Bottom location) DUAL OPERATIONS - program/erase in one Bank while read in others - No delay between read and write operations SECURITY - 64 bit unique device number - 2112 bit user programmable OTP Cells
Figure 1. Package
FBGA
TFBGA88 (ZAQ) 8 x 10mm
BLOCK LOCKING - All blocks locked at power-up - Any combination of blocks can be locked with zero latency - WPF for Block Lock-Down - Absolute Write Protection with VPP = VSS COMMON FLASH INTERFACE (CFI) 100,000 PROGRAM/ERASE CYCLES per BLOCK PSRAM ACCESS TIME: 70ns LOW STANDBY CURRENT: 110A DEEP POWER DOWN CURRENT: 10A
December 2004
1/18
M36L0R7040T0, M36L0R7040B0
TABLE OF CONTENTS
FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 FLASH MEMORY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Figure 1. Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 PSRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Figure 3. TFBGA Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Address Inputs (A0-A22). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Data Input/Output (DQ0-DQ15). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Flash Chip Enable (EF).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Flash Output Enable (GF). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Flash Write Enable (WF).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Flash Write Protect (WPF). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Flash Reset (RPF). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Flash Latch Enable (LF). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Flash Clock (KF). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Flash Wait (WAITF).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 PSRAM Chip Enable (E1P).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 PSRAM Chip Enable (E2P) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 PSRAM Write Enable (WP).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 PSRAM Output Enable (GP).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 PSRAM Upper Byte Enable (UBP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 PSRAM Lower Byte Enable (LBP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 VDDF Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 VDDP Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 VDDQ Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 VPPF Program Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 VSS Ground.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 FUNCTIONAL DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Figure 4. Functional Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 2. Main Operating modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 FLASH MEMORY COMPONENT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 PSRAM COMPONENT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Table 3. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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M36L0R7040T0, M36L0R7040B0
DC AND AC PARAMETERS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Table 4. Figure 5. Figure 6. Table 5. Table 6. Table 7. Table 8. Operating and AC Measurement Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Measurement Load Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Device Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Flash Memory DC Characteristics - Currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Flash Memory DC Characteristics - Voltages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 PSRAM DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 7. Stacked TFBGA88 8x10mm - 8x10 active ball array, 0.8mm pitch, Bottom View Outline15 Table 9. Stacked TFBGA88 8x10mm - 8x10 active ball array, 0.8mm pitch, Package Data. . . . . 15 PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Table 10. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 REVISION HISTORY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Table 11. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
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M36L0R7040T0, M36L0R7040B0
SUMMARY DESCRIPTION
The M36L0R7040T0 and M36L0R7040B0 combine two memory devices in a Multi-Chip Package: a 128-Mbit, Multiple Bank Flash memory, the M30L0R7000T0 or M30L0R7000B0, and a 16Mbit PseudoSRAM, the M69AR024B. Recommended operating conditions do not allow more than one memory to be active at the same time. The memory is offered in a Stacked TFBGA88 (8x10mm, 8x10 ball array, 0.8mm pitch) package. In addition to the standard version, the packages are also available in Lead-free version, in compliance with JEDEC Std J-STD-020B, the ST ECOPACK 7191395 Specification, and the RoHS (Restriction of Hazardous Substances) directive. All packages are compliant with Lead-free soldering processes. The memory is supplied with all the bits erased (set to `1'). Figure 2. Logic Diagram
VDDQ VDDF 23 A0-A22 DQ0-DQ15 EF GF WF RPF WPF LF KF E1P GP WP E2P UBP LBP M36L0R7040T0 M36L0R7040B0 WAITF VPPF VDDP 16
Table 1. Signal Names
A0-A22 (1) DQ0-DQ15 VDDF VDDQ VPPF VSS VDDP NC DU Address Inputs Common Data Input/Output Power Supply for Flash Memory Flash Memory Power Supply for I/O Buffers Flash Optional Supply Voltage for Fast Program and Erase Ground PSRAM Power Supply Not Connected Internally Do Not Use as Internally Connected
Flash Memory Control Functions LF EF GF WF RPF WPF KF WAITF Latch Enable Input Chip Enable Input Output Enable Input Write Enable Input Reset Input Write Protect Input Burst Clock Wait Data in Burst Mode
PSRAM Control Functions E1P GP WP E2P UBP LBP Chip Enable Input Output Enable Input Write Enable Input Power-down Input Upper Byte Enable Input Lower Byte Enable Input
Note: 1. A22-A20 are not connected to the PSRAM component.
VSS
AI08467
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M36L0R7040T0, M36L0R7040B0
Figure 3. TFBGA Connections (Top view through package)
1
2
3
4
5
6
7
8
A
DU
DU
DU
DU
B
A4
A18
A19
VSS
VDDF
NC
A21
A11
C
A5
LBP
NC
VSS
NC
KF
A22
A12
D
A3
A17
NC
VPPF
WP
EP
A9
A13
E
A2
A7
NC
WPF
LF
A20
A10
A15
F
A1
A6
UBP
RPF
WF
A8
A14
A16
G
A0
DQ8
DQ2
DQ10
DQ5
DQ13
WAITF
NC
H
GP
DQ0
DQ1
DQ3
DQ12
DQ14
DQ7
NC
J
NC
GF
DQ9
DQ11
DQ4
DQ6
DQ15
VDDQ
K
EF
DU
DU
NC
VDDP
NC
VDDQ
E2P
L
VSS
VSS
VDDQ
VDDF
VSS
VSS
VSS
VSS
M
DU
DU
DU
DU
AI08732
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M36L0R7040T0, M36L0R7040B0
SIGNAL DESCRIPTIONS
See Figure 2., Logic Diagram and Table 1., Signal Names, for a brief overview of the signals connected to this device. Address Inputs (A0-A22). Addresses A0-A19 are common inputs for the Flash memory and the PSRAM components. The other lines (A20-A22) are inputs for the Flash memory component only. The Address Inputs select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control the commands sent to the Command Interface of the Flash memory Program/Erase Controller or they select the cells to access in the PSRAM. The Flash memory component is accessed through the Chip Enable signal (EF) and through the Write Enable (WF) signal, while the PSRAM is accessed through two Chip Enable signals (E1P and E2P) and the Write Enable signal (WP). Data Input/Output (DQ0-DQ15). In the Flash memory, the Data I/O outputs the data stored at the selected address during a Bus Read operation or inputs a command or the data to be programmed during a Write Bus operation. In the PSRAM the Upper Byte Data Inputs/Outputs, DQ8-DQ15, carry the data to or from the upper part of the selected address during a Write or Read operation, when Upper Byte Enable (UBP) is driven Low. The Lower Byte Data Inputs/Outputs, DQ0-DQ7, carry the data to or from the lower part of the selected address during a Write or Read operation, when Lower Byte Enable (LBP) is driven Low Flash Chip Enable (EF). The Chip Enable input activates the memory control logic, input buffers, decoders and sense amplifiers. When Chip Enable is Low, VIL, and Reset is High, VIH, the device is in active mode. When Chip Enable is at VIH the Flash memory is deselected, the outputs are high impedance and the power consumption is reduced to the standby level. Flash Output Enable (GF). The Output Enable input controls data output during Flash memory Bus Read operations. Flash Write Enable (WF). The Write Enable controls the Bus Write operation of the Flash memories' Command Interface. The data and address inputs are latched on the rising edge of Chip Enable or Write Enable whichever occurs first. Flash Write Protect (WPF). Write Protect is an input that gives an additional hardware protection for each block. When Write Protect is Low, VIL, Lock-Down is enabled and the protection status of the Locked-Down blocks cannot be changed. When Write Protect is at High, VIH, Lock-Down is disabled and the Locked-Down blocks can be locked or unlocked. (See the Lock Status Table in the M30L0R7000T0 datasheet). Flash Reset (RPF). The Reset input provides a hardware reset of the memory. When Reset is at VIL, the memory is in Reset mode: the outputs are high impedance and the current consumption is reduced to the Reset Supply Current IDD2. Refer to Table 6., Flash Memory DC Characteristics - Currents, for the value of IDD2. After Reset all blocks are in the Locked state and the Configuration Register is reset. When Reset is at VIH, the device is in normal operation. Exiting Reset mode the device enters Asynchronous Read mode, but a negative transition of Chip Enable or Latch Enable is required to ensure valid data outputs. The Reset pin can be interfaced with 3V logic without any additional circuitry. It can be tied to VRPH (refer to Table 7., Flash Memory DC Characteristics - Voltages). Flash Latch Enable (LF). Latch Enable latches the address bits on its rising edge. The address latch is transparent when Latch Enable is Low, VIL, and it is inhibited when Latch Enable is High, VIH. Latch Enable can be kept Low (also at board level) when the Latch Enable function is not required or supported. Flash Clock (KF). The Clock input synchronizes the Flash memory to the microcontroller during synchronous read operations; the address is latched on a Clock edge (rising or falling, according to the configuration settings) when Latch Enable is at VIL. Clock is don't care during Asynchronous Read and in write operations. Flash Wait (WAITF). WAITF is a Flash output signal used during Synchronous Read to indicate whether the data on the output bus are valid. This output is high impedance when Flash Chip Enable is at VIH or Flash Reset is at VIL. It can be configured to be active during the wait cycle or one clock cycle in advance. The WAITF signal is not gated by Output Enable. asserted PSRAM Chip Enable (E1P). When (Low), the Chip Enable, E1P, activates the memory state machine, address buffers and decoders, allowing Read and Write operations to be performed. When de-asserted (High), all other pins are ignored, and the device is put, automatically, in low-power Standby mode. It is not allowed to set EF at VIL, E1P at VIL and E2P at VIH at the same time. PSRAM Chip Enable (E2P). The Chip Enable, E2P, puts the device in Deep Power-down mode when it is driven Low. This is the lowest power mode.
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M36L0R7040T0, M36L0R7040B0
It is not allowed to set EF at VIL, E1P at VIL and E2P at VIH at the same time. PSRAM Write Enable (WP). The Write Enable input controls writing to the PSRAM memory array. WP is active low. PSRAM Output Enable (GP). The Output Enable gates the outputs through the data buffers during a Read operation of the PSRAM memory. GP is active low. PSRAM Upper Byte Enable (UBP). The Upper Byte Enable input enables the upper byte for PSRAM (DQ8-DQ15). UBP is active low. PSRAM Lower Byte Enable (LBP). The Lower Byte Enable input enables the lower byte for PSRAM (DQ0-DQ7). LBP is active low. VDDF Supply Voltage. VDDF provides the power supply to the internal cores of the Flash memory component. It is the main power supply for all Flash operations (Read, Program and Erase). VDDP Supply Voltage. VDDP provides the power supply to the internal core of the PSRAM device. It is the main power supply for all PSRAM operations. VDDQ Supply Voltage. VDDQ provides the power supply for the Flash Memory I/O pins. This allows all Outputs to be powered independently of the Flash Memory core power supply, VDDF. VPPF Program Supply Voltage. VPPF is both a Flash control input and a Flash power supply pin. The two functions are selected by the voltage range applied to the pin. If VPPF is kept in a low voltage range (0V to VDDQ) VPPF is seen as a control input. In this case a voltage lower than VPPLKF gives an absolute protection against Program or Erase, while VPPF > VPP1F enables these functions (see Tables 6 and 7, DC Characteristics for the relevant values). VPPF is only sampled at the beginning of a Program or Erase; a change in its value after the operation has started does not have any effect and Program or Erase operations continue. If VPPF is in the range of VPPHF it acts as a power supply pin. In this condition VPPF must be stable until the Program/Erase algorithm is completed. VSS Ground. VSS is the common ground reference for all voltage measurements in the Flash (core and I/O Buffers) and PSRAM chips. Note: Each Flash memory device in a system should have their supply voltage (VDDF) and the program supply voltage VPPF decoupled with a 0.1F ceramic capacitor close to the pin (high frequency, inherently low inductance capacitors should be as close as possible to the package). See Figure 6., AC Measurement Load Circuit. The PCB track widths should be sufficient to carry the required VPPF program and erase currents.
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M36L0R7040T0, M36L0R7040B0
FUNCTIONAL DESCRIPTION
The PSRAM and Flash memory components have separate power supplies but share the same grounds. They are distinguished by three Chip Enable inputs: EF for the Flash memory and E1P and E2P for the PSRAM. Recommended operating conditions do not allow more than one device to be active at a time. The Figure 4. Functional Block Diagram most common example is simultaneous read operations in the Flash memory and the PSRAM which would result in a data bus contention. Therefore it is recommended to put the other device in the high impedance state when reading the selected device.
VDDF VPPF VDDQ
EF A20-A22 A0-A19 GF WF RPF WPF LF KF VDDP 128 Mbit Flash Memory DQ0-DQ15 WAITF
E1P GP WP E2P UBP LBP 16 Mbit PSRAM
VSS
AI08468
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M36L0R7040T0, M36L0R7040B0
Table 2. Main Operating modes
Operation Flash Read Flash Write Flash Address Latch Flash Output Disable Flash Standby Flash Reset PSRAM Read Flash Memory must be disabled PSRAM Write Output Disable PSRAM Standby PSRAM Deep Power-Down
Note: 1. 2. 3. 4.
EF VIL VIL VIL VIL VIH X
GF VIL VIH X VIH X X
WF VIH VIL VIH VIH X X
LF VIL(2) VIL(2) VIL X X X
RPF WAITF(4) VIH VIH VIH VIH VIH VIL Hi-Z Hi-Z
E1P
E2P
GP
WP
LBP,UBP
DQ15-DQ0 Flash Data Out
PSRAM must be disabled
Flash Data In Flash Data Out or Hi-Z (3) Hi-Z
Any PSRAM mode is allowed
Hi-Z Hi-Z
VIL VIL VIL Any Flash mode is allowed VIH X
VIH VIH VIH VIH VIL
VIL VIH VIH X X
VIH VIL VIH X X
VIL VIL X X X
PSRAM data out PSRAM data in Hi-Z Hi-Z Hi-Z
X = Don't care. LF can be tied to VIH if the valid address has been previously latched. Depends on GF. WAIT signal polarity is configured using the Set Configuration Register command. See the M30L0R7000T0 datasheet for details.
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M36L0R7040T0, M36L0R7040B0
FLASH MEMORY COMPONENT
The M36L0R7040T0 and M36L0R7040B0 contain a 128 Mbit Flash memory. For detailed information on how to use the devices, see the M30L0R7000(T/B)0 datasheet which is available from the internet site http://www.st.com or from your local STMicroelectronics distributor.
PSRAM COMPONENT
The M36L0R7040T0 and M36L0R7040B0 contain a 16 Mbit PSRAM. For detailed information on how to use the device, see the M69AR024B datasheet which is available from the internet site http:// www.st.com or from your local STMicroelectronics distributor.
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M36L0R7040T0, M36L0R7040B0
MAXIMUM RATING
Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not imTable 3. Absolute Maximum Ratings
Value Symbol TA TBIAS TSTG TLEAD VIO VDDF, VDDQ, VDDP VPPF IO tVPPFH Parameter Min Ambient Operating Temperature Temperature Under Bias Storage Temperature Lead Temperature during Soldering Input or Output Voltage Core and Input/Output Supply Voltages Flash Program Voltage Output Short Circuit Current Time for VPPF at VPPFH -0.2 -0.2 -0.2 -25 -25 -65 Max 85 85 125
(1)
plied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
Unit C C C C V V V mA hours
7191395 specification,
3.3 2.5 14 100 100
ECOPACK(R)
Note: 1. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
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M36L0R7040T0, M36L0R7040B0
DC AND AC PARAMETERS
This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the Measurement Conditions summarized in Table 4., Operating and AC Measurement Conditions. Designers should check that the operating conditions in their circuit match the operating conditions when relying on the quoted parameters.
Table 4. Operating and AC Measurement Conditions
Flash Memory Parameter Min VDDF Supply Voltage VDDP Supply Voltage VDDQF Supply Voltage 1.7 - 1.7 8.5 -0.4 -25 30 16.7 5 0 to VDDQ VDDQ/2 5 0 to VDDQ VDDQ/2 Max 1.95 - 1.95 12.6 VDDQ +0.4 85 Min - 1.7 - - - -25 50 16.7 Max - 1.95 - - - 85 V V V V V C pF k ns V V PSRAM Unit
VPPF Supply Voltage (Factory environment) VPPF Supply Voltage (Application
environment) Ambient Operating Temperature Load Capacitance (CL) Output Circuit Resistors (R1, R2) Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages
Figure 5. AC Measurement I/O Waveform
Figure 6. AC Measurement Load Circuit
VDDQ
VDDQ VDDQ/2 0V
VDDF
VDDQ R1 DEVICE UNDER TEST
AI06161
0.1F 0.1F
CL
R2
CL includes JIG capacitance
AI08364B
Table 5. Device Capacitance
Symbol CIN COUT Parameter Input Capacitance Output Capacitance Test Condition VIN = 0V VOUT = 0V Min Max 12 15 Unit pF pF
Note: Sampled only, not 100% tested.
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Table 6. Flash Memory DC Characteristics - Currents
Symbol ILI ILO Parameter Input Leakage Current Output Leakage Current Supply Current Asynchronous Read (f=6MHz) Test Condition 0V VIN VDDQ 0V VOUT VDDQ EF = VIL, GF = VIH 4 Word Supply Current Synchronous Read (f=40MHz) IDD1 8 Word 16 Word Continuous 4 Word Supply Current Synchronous Read (f=54MHz) 8 Word 16 Word Continuous IDD2 IDD3 IDD4 Supply Current (Reset) Supply Current (Standby) Supply Current (Automatic Standby) Supply Current (Program) IDD5 (1) Supply Current (Erase) VPPF = VDDF Program/Erase in one Bank, Asynchronous Read in another Bank Program/Erase in one Bank, Synchronous Read in another Bank EF = VDDF 0.2V VPPF = VPPH VPPF = VDDF VPPF = VPPH VPPF = VDDF VPPF VDDF VPPF VDDF 10 20 20 35 mA mA VPPF = VDDF VPPF = VPPH 10 8 20 15 mA mA RPF = VSS 0.2V EF = VDDF 0.2V EF = VIL, GF = VIH VPPF = VPPH 10 7 10 13 18 16 18 21 22 25 25 25 8 Min Typ Max 1 1 15 16 18 20 25 18 20 25 27 70 70 70 15 Unit A A mA mA mA mA mA mA mA mA mA A A A mA
Supply Current IDD6 (1,2) (Dual Operations)
32
47
mA
IDD7(1)
Supply Current Program/ Erase Suspended (Standby) VPPF Supply Current (Program)
25 2 0.2 2 0.2 0.2 0.2
70 5 5 5 5 5 5
A mA A mA A A A
IPP1(1) VPPF Supply Current (Erase) IPP2 IPP3(1) VPPF Supply Current (Read) VPPF Supply Current (Standby)
Note: 1. Sampled only, not 100% tested. 2. VDDF Dual Operation current is the sum of read and program or erase currents.
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Table 7. Flash Memory DC Characteristics - Voltages
Symbol VIL VIH VOL VOH VPP1 VPPH VPPLK VLKO VRPH Parameter Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage VPPF Program Voltage-Logic VPPF Program Voltage Factory Program or Erase Lockout VDDF Lock Voltage RPF pin Extended High Voltage 1 3.3 IOL = 100A IOH = -100A Program, Erase Program, Erase VDDQ -0.1 1.1 8.5 1.8 9.0 3.3 12.6 0.4 Test Condition Min -0.5 VDDQ -0.4 Typ Max 0.4 VDDQ + 0.4 0.1 Unit V V V V V V V V V
Table 8. PSRAM DC Characteristics
Symbol ICC1 VCC Active Current ICC2 ILI ILO IPD Input Leakage Current Output Leakage Current Deep Power Down Current Parameter Test Condition VDDP = 1.95V, VIN = VIH or VIL, E1P = VIL and E2P = VIH, IOUT = 0mA tAVAV Read / tAVAV Write = minimum tAVAV Read / tAVAV Write = maximum -1 -1 Min Max 20 Unit mA
3 1 1 10
mA A A A
0V VIN VDDP 0V VOUT VDDP VDDP = 1.95V, E1P VDDP - 0.2V or E1P VIL, VIN VDDP - 0.2V or VIN 0.2V VDDP = 1.95V, E1P = E2P VDDP - 0.2V, IOUT = 0mA
ISB VIH (1) VIL (2) VOH VOL
Note: 1. 2. 3. 4.
Standby Supply Current CMOS Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage
110 0.8VDDP -0.3 VDDP + 0.2 0.4
A V V V
IOH = -0.5mA IOL = 1mA
VDDP - 0.2 0.2
V
Average AC current, cycling at tAVAV minimum. E1P = VIL, E2P = VIH, UBP OR/AND LBP = VIL, VIN = VIH OR VIL. E1P 0.2V or E2P VDDQ -0.2V, UBP OR/AND LBP 0.2V, VIN 0.2V or VIN VDDQ -0.2V. Output disabled.
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PACKAGE MECHANICAL
Figure 7. Stacked TFBGA88 8x10mm - 8x10 active ball array, 0.8mm pitch, Bottom View Outline
D D1
e SE E E2 E1 b BALL "A1"
ddd FE FE1 A A1 FD SD A2
BGA-Z42
Note: Drawing is not to scale.
Table 9. Stacked TFBGA88 8x10mm - 8x10 active ball array, 0.8mm pitch, Package Data
millimeters Symbol Typ A A1 A2 b D D1 ddd E E1 E2 e FD FE FE1 SD SE 10.000 7.200 8.800 0.800 1.200 1.400 0.600 0.400 0.400 - - 9.900 0.850 0.350 8.000 5.600 0.100 10.100 0.3937 0.2835 0.3465 0.0315 0.0472 0.0551 0.0236 0.0157 0.0157 - - 0.3898 0.300 7.900 0.400 8.100 0.200 0.0335 0.0138 0.3150 0.2205 0.0039 0.3976 0.0118 0.3110 0.0157 0.3189 Min Max 1.200 0.0079 Typ Min Max 0.0472 inches
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PART NUMBERING
Table 10. Ordering Information Scheme
Example: Device Type M36 = Multi-Chip Package (Flash + RAM) Flash 1 Architecture L = Multilevel, Multiple Bank, Burst mode Flash 2 Architecture 0 = No Die Operating Voltage R = VDDF = VDDP = VDDQ = 1.7 to 1.95V Flash 1 Density 7 = 128 Mbit Flash 2 Density 0 = No Die RAM 1 Density 4 = 16 Mbit RAM 0 Density 0 = No Die Parameter Blocks Location T = Top Boot Block Flash B = Bottom Boot Block Flash Product Version 0 = 0.13m Flash technology, 85ns speeds; 0.18m RAM, 70ns speed Package ZAQ = Stacked TFBGA88 8x10mm - 8x10 active ball array, 0.8mm pitch Option Blank = Standard Packing T = Tape & Reel Packing E = Lead-free and RoHS package, standard packing F= Lead-free and RoHS package, tape and reel packing M36 L 0 R 7 0 4 0 T 0 ZAQ T
Devices are shipped from the factory with the memory content bits erased to '1'. For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you.
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REVISION HISTORY
Table 11. Document Revision History
Date 19-Nov-2003 Version 1.0 First Issue TFBGA88 package specifications updated. TFBGA88 package fully compliant with the ST ECOPACK specification. Flash memory and PSRAM data updated to revision 1.0 of M30L0R7000x0 datasheet and revision 6.0 of M69AR024B datasheet. Document status promoted from Target Specification to full Datasheet. Revision Details
06-Dec-2004
2.0
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. ECOPACK is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
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